Z-Q. Fang: search on Z-Library

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1

Recovery of quenched hopping conduction in GaAs layers grown by molecular-beam epitaxy at 200 °C

Look, D. C., Fang, Z-Q., Sizelove, J. R.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 147 KB

english, 1993

2

Observation of a metastable defect transition in GaAs

Look, D. C., Fang, Z-Q., Sizelove, J. R.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 239 KB

english, 1994

3

Material analysis and characterization on zone refined and zone leveled vertical zone melt GaAs for radiation spectrometers

D.S McGregor, A.J Antolak, E.S Cross, Z-Q Fang, M.S Goorsky, R.L Henry, R.B James, D.C Look, M.G Mier, D.H Morse, P.E.R Nordquist, R Olsen, M Schieber, T.E Schlesinger, E Soria, J.E Toney, J Van Scyoc

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1996

Language:

english

File:

PDF, 510 KB

english, 1996

4

Characterization of deep centers in bulk n-type 4H–SiC

Z-Q. Fang, D.C. Look, A. Saxler, W.C. Mitchel

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 119 KB

english, 2001

5

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

Z-Q. Fang, D. C. Look, C. Lu, H. Morkoç

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 155 KB

english, 2000

6

Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

Z-Q. Fang, Q. H. Xie, D. C. Look, J. Ehret, J. E. Van Nostrand

Journal:

Journal of Electronic Materials

Year:

1999

Language:

english

File:

PDF, 170 KB

english, 1999

7

Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy

Z-Q. Fang, D. C. Look, M. Pavlovic, U. V. Desnica

Journal:

Journal of Electronic Materials

Year:

1999

Language:

english

File:

PDF, 183 KB

english, 1999

8

Electrical field enhanced thermal quenching of a prominent thermally stimulated current peak in semi-insulating GaAs

Fang, Z-Q., Look, D. C.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 320 KB

english, 1995

9

Dislocation-related electron capture behaviour of traps in n-type GaN

Fang, Z-Q, Look, D C, Polenta, L

Journal:

Journal of Physics Condensed Matter

Year:

2002

Language:

english

File:

PDF, 304 KB

english, 2002

10

On the main irradiation-induced defect in GaN

Polenta, L., Fang, Z-Q., Look, D. C.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 309 KB

english, 2000

11

related center in GaAs

Look, D. C., Fang, Z-Q., Sizelove, J. R., Stutz, C. E.

Journal:

Physical Review Letters

Year:

1993

Language:

english

File:

PDF, 622 KB

english, 1993

12

Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., Fang, Z-Q., Look, D. C., Park, S. S., Han, J. H.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 534 KB

english, 2002

13

Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC

Look, D. C., Fang, Z-Q., Soloviev, S., Sudarshan, T. S., Boeckl, J. J.

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 149 KB

english, 2004

14

Identification of electron-irradiation defects in semi-insulating GaAs by normalized thermally stimulated current measurements

Look, D. C., Fang, Z-Q., Hemsky, J. W., Kengkan, P.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 121 KB

english, 1997

15

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Fang, Z-Q., Look, D. C., Kim, W., Fan, Z., Botchkarev, A., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 255 KB

english, 1998

16

Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

Chung, Sung-Yong, Jin, Niu, Rice, Anthony T., Berger, Paul R., Yu, Ronghua, Fang, Z-Q., Thompson, Phillip E.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

17

Infrared quenching and thermal recovery of thermally stimulated current spectra in GaAs

Fang, Z-Q., Look, D. C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 645 KB

english, 1991

18

Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band

Yamamoto, H., Fang, Z-Q., Look, D. C.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 548 KB

english, 1990

19

Comparison of deep centers in semi-insulating liquid-encapsulated Czochralski and vertical-gradient freeze GaAs

Fang, Z-Q., Look, D. C.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 950 KB

english, 1991

20

Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy

Fang, Z-Q., Look, D. C., Armitage, R., Yang, Q., Weber, E. R.

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 317 KB

english, 2003

21

Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors

Schuermeyer, Fritz, Cerny, Charles, Bozada, Chris, Fang, Z-Q., Look, D. C.

Journal:

Japanese Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 992 KB

english, 1997

22

Deep level characteristics in n-GaN with inductively coupled plasma damage

Cho, H K, Khan, F A, Adesida, I, Fang, Z-Q, Look, D C

Journal:

Journal of Physics D Applied Physics

Year:

2008

Language:

english

File:

PDF, 208 KB

english, 2008

23

Electron Irradiation Induced Trap In N-Type Gan

Fang, Z-Q., Hemsky, J. W., Look, D. C., Mack, M. P., Molnar, R. J., Via, G. D.

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 410 KB

english, 1997

24

Origin and Behavior of Main Electron Traps in Si-Implanted GaAs

Fang, Z-Q., Yamamoto, H., Look, D. C.

Journal:

MRS Proceedings

Year:

1990

Language:

english

File:

PDF, 499 KB

english, 1990

25

Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy

Fang, Z-Q, Look, D. C.

Journal:

MRS Proceedings

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

26

Identification of the 0.15 eV Donor Defect in Bulk GaAs

Fang, Z-Q., Hemsky, J. W., Look, D. C.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 3.12 MB

english, 1993

27

Identification of the 0.15 eV Donor Defect in Bulk GaAs

Fang, Z-Q., Hemsky, J. W., Look, D. C.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 454 KB

english, 1993

28

An Anomalous Deep Center (EC-0.31 Ev) in Semi-Insulating GaAs

Fang, Z-Q., Look, D. C.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

29

Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

Fang, Z-Q., Look, D. C., Kim, Wook, Morkoç, H.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 91 KB

english, 1999

30

Characteristics of deep traps in freestanding GaN

Fang, Z-Q., Look, D.C., Visconti, P., Lu, C., Wang, D., Morkoç, H., Park, S.S., Lee, K.Y.

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 133 KB

english, 2001

31

Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy

Chung, Sung-Yong, Berger, Paul R., Fang, Z-Q., Thompson, Phillip E.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 77 KB

english, 2002

32

High-Temperature Illumination-Induced Metastability in Undoped Semi-Insulating GaN Grown by Metalorganic Vapor Phase Epitaxy

Fang, Z-Q., Claflin, B. B., Look, D. C., Myers, T. H., Koleske, D. D., Wickenden, A. E., Henry, R. L.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 153 KB

english, 2002